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MAIK Nauka/Interperiodica

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Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density

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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In_0.1Ga_0.9As/AlGaAs/GaAs heterostructures

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Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure

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AlGaN-based laser diodes for the short-wavelength ultraviolet region

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