Effects of DC gate and drain bias stresses on the degradation of excimer laser crystallized polysilicon thin film transistors

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.10, Iss.1, 2005-01, pp. : 45-48

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Positive gate bias instability alleviated by self-passivation effect in amorphous InGaZnO thin-film transistors

By  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 47, 2015-12 ,pp. : 475107-475112

IOP Publishing

Access to resources Recommend Favorite

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

By Ishikawa Yasuaki   Fujii Mami N   Nonaka Toshiaki   Ishihara Ryoichi   Ikenoue Hiroshi   Uraoka Yukiharu   Ishikawa Yasuaki  

Journal of Physics D: Applied Physics, Vol. 49, Iss. 3, 2016-01 ,pp. : 35102-35108

IOP Publishing

Access to resources Recommend Favorite

Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors

By Tue Phan Trong   Miyasako Takaaki   Trinh Bui Nguyen Quoc   Li Jinwang   Tokumitsu Eisuke   Shimoda Tatsuya  

Ferroelectrics, Vol. 405, Iss. 1, 2010-01 ,pp. : 281-291

Taylor & Francis Ltd

Access to resources Recommend Favorite

Positive gate-bias temperature instability of ZnO thin-film transistor

By Yu-Rong Liu   Jing Su   Pei-Tao Lai   Ruo-He Yao  

Chinese Physics B, Vol. 23, Iss. 6, 2014-06 ,pp. : 68501-68506

IOP Publishing

Access to resources Recommend Favorite

A simple and continuous on-state current model of polysilicon thin-film transistors for circuit simulation

By  

Journal of Physics: Conference Series , Vol. 10, Iss. 1, 2005-01 ,pp. : 27-30

IOP Publishing

Access to resources Recommend Favorite