GaN quantum dots in (Al,Ga)N-based Microdisks

By  

Journal of Physics: Conference Series , Vol. 210, Iss. 1, 2010-02 ,pp. : 289-292

IOP Publishing

Access to resources Recommend Favorite

The effects of polarization fields on exciton binding energy in GaN quantum dots

By  

Journal of Physics: Conference Series , Vol. 248, Iss. 1, 2010-11 ,pp. : 116-123

IOP Publishing

Access to resources Recommend Favorite

Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates

By Odnoblyudov V.   Egorov A.   Kryzhanovskaya N.   Gladyshev A.   Mamutin V.   Tsatsul’nikov A.   Ustinov V.  

Technical Physics Letters, Vol. 28, Iss. 11, 2002-11 ,pp. : 964-966

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Measuring two dimensional strain state of AlN quantum dots in GaN nanowires by nanobeam electron diffraction

By  

Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. : 263-266

IOP Publishing

Access to resources Recommend Favorite

Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes

By Lai Wang   Di Yang   Zhi-Biao Hao   Yi Luo  

Chinese Physics B, Vol. 24, Iss. 6, 2015-06 ,pp. : 67303-67308

IOP Publishing

Access to resources Recommend Favorite