Oxidation of hydrogenated crystalline silicon as an alternative approach for ultrathin SiO2 growth

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.10, Iss.1, 2005-01, pp. : 246-250

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

GROWTH AND STRUCTURE OF NONCRYSTALLINE SiO2 FILMS ON SILICON

By  

Le Journal de Physique Colloques, Vol. 46, Iss. C8, 1985-12 ,pp. : C8-495-C8-498

Edp Sciences

Access to resources Recommend Favorite

Low-temperature deposition of ultrathin SiO2 films on Si substrates

By  

Journal of Physics: Conference Series , Vol. 514, Iss. 1, 2014-05 ,pp. : 50-54

IOP Publishing

Access to resources Recommend Favorite

The electroluminescence of SiO2 layers with excess silicon

By Baraban A.   Egorov D.   Petrov Yu.   Miloglyadova L.  

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 40-41

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Ultra-Thin Ferroelectric Films Modified by Bi2SiO5

By Kijima Takeshi   Ishiwara Hiroshi  

Ferroelectrics, Vol. 271, Iss. 1, 2002-01 ,pp. : 289-295

Taylor & Francis Ltd

Access to resources Recommend Favorite

Formation of light-emitting silicon nanoclusters in SiO2

By  

Journal of Physics: Conference Series , Vol. 265, Iss. 1, 2011-01 ,pp. : 202-207

IOP Publishing

Access to resources Recommend Favorite