Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

By Hai-Yan Lü   Qi Mu   Lei Zhang   Yuan-Jie Lü   Zi-Wu Ji   Zhi-Hong Feng   Xian-Gang Xu   Qi-Xin Guo  

Chinese Physics B, Vol. 24, Iss. 12, 2015-12 ,pp. : 124207-124212

IOP Publishing

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GROWTH OF InP-EPITAXIAL LAYERS : A COMPARISON BETWEEN MOVPE- AND VPE-TECHNIQUES

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Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-393-C5-399

Edp Sciences

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Dislocation reduction in MOVPE grown GaN layers on (111)Si using SiNx and AlGaN layers

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Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 128-131

IOP Publishing

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TEM and XANES study of MOVPE grown InAIN layers with different indium content

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Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. : 121-124

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The Annealing-Induced Shape Deformation of Hydrothermal-Grown ZnO Nanorods

By Zhong-Kui Zheng   Qing-Duo Duanmu   Dong-Xu Zhao   Li-Dan Wang   De-Zhen Shen  

Chinese Physics Letters, Vol. 29, Iss. 1, 2012-01 ,pp. : 17804-17807

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