Publisher: IOP Publishing
ISSN: 1367-2630
Source: New Journal of Physics, Vol.11, Iss.12, 2009-12, pp. : 747-759
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
ZnTe-GaN heterostructure switching device
By Drizhuk A. Sidorov V. Sidorov D. Shagalov M.
Technical Physics Letters, Vol. 23, Iss. 10, 1997-10 ,pp. :
Optical properties of Ag-coated GaN/InGaN axial and core–shell nanowire light-emitting diodes
Journal of Optics, Vol. 17, Iss. 2, 2015-02 ,pp. :