THE EFFECT OF ARSENIC SPECIES ON THE MINORITY CARRIER PROPERTIES OF (AlGa)As-GaAs DOUBLE HETEROSTRUCTURES GROWN BY MBE

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Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-129-C5-134

Edp Sciences

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovskii L.   Velikovskii I.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chalyi V.  

Technical Physics Letters, Vol. 31, Iss. 10, 2005-10 ,pp. : 864-867

MAIK Nauka/Interperiodica

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OPTICAL STUDY ON BAND EDGE OFFSET IN STRAINED MBE GROWN (InGa)As-GaAs AND (InGa)As-(AlGa)As QUANTUM WELLS

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Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-163-C5-167

Edp Sciences

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Electro-optic processes in InGaAs/GaAs quantum wires grown by MBE on patterned substrates

By Rinaldi R.   deVittorio M.   Cingolani R.   Marti U.   Reinhart F.K.  

Superlattices and Microstructures, Vol. 22, Iss. 2, 1997-09 ,pp. : 237-241

Academic Press

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Atomic structure of MBE-grown GaAs nanowhiskers

By Soshnikov I.   Cirlin G.   Tonkikh A.   Samsonenko Yu.   Dubovskii V.   Ustinov V.   Gorbenko O.   Litvinov D.   Gerthsen D.  

Physics of the Solid State, Vol. 47, Iss. 12, 2005-12 ,pp. : 2213-2218

MAIK Nauka/Interperiodica

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