AlGaN/GaN HEMTs grown by ammonia MBE

By Volkov V.   Ivanova V.   Kuz’michev Yu.   Lermontov S.   Solov’ev Yu.   Baranov D.   Kaidash A.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Chalyi V.  

Technical Physics Letters, Vol. 30, Iss. 5, 2004-05 ,pp. : 380-382

MAIK Nauka/Interperiodica

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Fractal terraces in MBE growth

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Journal de Physique I, Vol. 3, Iss. 2, 1993-02 ,pp. : 447-457

Edp Sciences

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GaAsN-on-GaAs MBE using a DC plasma source

By Zhukov A.   Semenova E.   Ustinov V.   Weber E.  

Technical Physics, Vol. 46, Iss. 10, 2001-10 ,pp. : 1265-1269

MAIK Nauka/Interperiodica

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MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen

By Petrov S.   Kaidash A.   Krasovitskii D.   Sokolov I.   Pogorel’skii Yu.   Chalyi V.   Shkurko A.   Stepanov M.   Pavlenko M.   Baranov D.  

Technical Physics Letters, Vol. 30, Iss. 7, 2004-07 ,pp. : 580-582

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE

By Alekseev A.   Aleksandrov S.   Byrnaz A.   Velikovskii L.   Velikovskii I.   Krasovitskii D.   Pavlenko M.   Petrov S.   Pogorel’skii Yu.   Sokolov I.   Sokolov M.   Stepanov M.   Tkachenko A.   Shkurko A.   Chalyi V.  

Technical Physics Letters, Vol. 31, Iss. 10, 2005-10 ,pp. : 864-867

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