Ratchet effect study in Si/SiGe heterostructures in the presence of asymmetrical antidots for different polarizations of microwaves

Publisher： IOP Publishing

ISSN： 1468-6996

Source： Science and Technology of Advanced Materials, Vol.15, Iss.4, 2014-08, pp. : 170-176

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Energy-filtered transmission electron microscopy of Si m Ge n superlattices and Si-Ge heterostructures I. Experimental results

By Jager W.   Mayer J.  

Ultramicroscopy, Vol. 59, Iss. 1, 1995-07 ,pp. : 33-45

Elsevier

Access to resources Recommend Favorite

First-principles quantum molecular dynamics study of TixZr1−xN(111)/SiNy heterostructures and comparison with experimental results

By  

Science and Technology of Advanced Materials, Vol. 15, Iss. 2, 2014-04 ,pp. : 164-174

IOP Publishing

Access to resources Recommend Favorite

Recent progress in GeSi electro-absorption modulators

By  

Science and Technology of Advanced Materials, Vol. 15, Iss. 1, 2014-02 ,pp. : 128-135

IOP Publishing

Access to resources Recommend Favorite

First-principles study on electronic structure of Si/SiO2 interface—Effect of interface defects on local charge density

By  

Science and Technology of Advanced Materials, Vol. 8, Iss. 3, 2007-04 ,pp. : 70-73

IOP Publishing

Access to resources Recommend Favorite

Origin of photoluminescence peaks in Ge–SiO2 thin films

By  

Science and Technology of Advanced Materials, Vol. 3, Iss. 3, 2002-06 ,pp. : 18-21

IOP Publishing

Access to resources Recommend Favorite