Publisher: IOP Publishing
ISSN: 1742-6596
Source: Journal of Physics: Conference Series , Vol.209, Iss.1, 2010-02, pp. : 166-169
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
PULSED LASER ATOM PROBE ANALYSIS OF III-V COMPOUND SEMICONDUCTORS
Le Journal de Physique Colloques, Vol. 47, Iss. C2, 1986-03 ,pp. :
Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis
Journal of Physics: Conference Series , Vol. 326, Iss. 1, 2011-11 ,pp. :
PULSED LASER ATOM PROBE CHARACTERIZATION OF SILICON CARBIDE
Le Journal de Physique Colloques, Vol. 50, Iss. C8, 1989-11 ,pp. :
AN ATOM-PROBE STUDY OF III-V COMPOUND SEMICONDUCTORS
Le Journal de Physique Colloques, Vol. 45, Iss. C9, 1984-12 ,pp. :