Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential

Publisher: IOP Publishing

ISSN: 1742-6596

Source: Journal of Physics: Conference Series , Vol.167, Iss.1, 2009-05, pp. : 134-138

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract