Formation of Si nanocrystals in ion implanted Si-SiO2 structures by MeV electron irradiation

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.356, Iss.1, 2012-03, pp. : 26-29

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of MeV electron irradiation on Si-SiO2 structures

Journal of Physics: Conference Series , Vol. 514, Iss. 1, 2014-05 ,pp. : 201-204

IOP Publishing

Access to resources Recommend Favorite

Electroluminescence of ion-implanted Si-SiO₂ structures

By Baraban A. Konorov P. Malyavka L. Troshikhin A.

Technical Physics, Vol. 45, Iss. 8, 2000-08 ,pp. : 1042-1044

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electric field affects the charge state in ion-implanted Si-SiO₂ structures

By Baraban A. Miloglyadova L. Ter-Nersesyants V.

Technical Physics Letters, Vol. 27, Iss. 2, 2001-02 ,pp. : 129-131

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of Xe ion (167 MeV) irradiation on polycrystalline SiC implanted with Kr and Xe at room temperature

Journal of Physics D: Applied Physics, Vol. 48, Iss. 46, 2015-11 ,pp. : 465306-465312

IOP Publishing

Access to resources Recommend Favorite

Si nanoclusters generated in Si-SiO2 structures implanted with different doses of Si ions

Journal of Physics: Conference Series , Vol. 223, Iss. 1, 2010-04 ,pp. : 138-141

IOP Publishing

Access to resources Recommend Favorite