Characterisation of anisotropic etching in KOH using network etch rate function model: influence of an applied potential in terms of microscopic properties

Publisher： IOP Publishing

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.34, Iss.1, 2006-04, pp. : 1039-1044

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Two-Layer Microstructures Fabricated by One-Step Anisotropic Wet Etching of Si in KOH Solution †

By Lu Han   Zhang Hua   Jin Mingliang   He Tao   Zhou Guofu   Shui Lingling  

Micromachines, Vol. 7, Iss. 2, 2016-01 ,pp. : 19-19

MDPI

Access to resources Recommend Favorite

Avalanche properties of sandpile models in terms of a microscopic parameter

By Ahmed J. A.   Santra S. B.  

EPL (EUROPHYSICS LETTERS), Vol. 90, Iss. 5, 2010-07 ,pp. : 50006-50006

Edp Sciences

Access to resources Recommend Favorite

Microscopic model of the Knight shift in anisotropic and correlated metals

By Hall Bianca E   Klemm Richard A  

Journal of Physics: Condensed Matter, Vol. 28, Iss. 3, 2016-01 ,pp. : 3LT01-16

IOP Publishing

Access to resources Recommend Favorite

Influence of potential truncation on anisotropic systems

By Ashbaugh Henry S.  

Molecular Physics, Vol. 97, Iss. 3, 1999-08 ,pp. : 433-437

Taylor & Francis Ltd

Access to resources Recommend Favorite

Analysis of 6He+12C elastic scattering and breakup reactions using a microscopic optical potential model

By  

Journal of Physics: Conference Series , Vol. 366, Iss. 1, 2012-05 ,pp. : 168-172

IOP Publishing

Access to resources Recommend Favorite