Effects of Film Thickness and Ar/O2 Ratio on Resistive Switching Characteristics of HfOx-Based Resistive-Switching Random Access Memories

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|1|16801-16804

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.1, 2015-01, pp. : 16801-16804

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