A novel method of identifying the carrier transport path in metal oxide resistive random access memory

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|6|65101-65106

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.6, 2015-02, pp. : 65101-65106

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A Metal Oxide Heterostructure for Resistive Random Access Memory Devices

By Zhao-Liang Liao   Dong-Min Chen  

Chinese Physics Letters, Vol. 30, Iss. 4, 2013-04 ,pp. : 47701-47704

IOP Publishing

Access to resources Recommend Favorite

The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells

By Da-Wei Li   Jun-Rui Qin   Shu-Ming Chen  

Chinese Physics B, Vol. 22, Iss. 2, 2013-02 ,pp. : 29402-29405

IOP Publishing

Access to resources Recommend Favorite

First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory

By  

Chinese Physics B, Vol. 23, Iss. 12, 2014-12 ,pp. : 127301-127306

IOP Publishing

Access to resources Recommend Favorite

Effects of different dopants on switching behavior of HfO2-based resistive random access memory

By Ning Deng   Hua Pang   Wei Wu  

Chinese Physics B, Vol. 23, Iss. 10, 2014-10 ,pp. : 107306-107309

IOP Publishing

Access to resources Recommend Favorite

Resistive switching and electrical control of ferromagnetism in a Ag/HfO2/Nb:SrTiO3/Ag resistive random access memory (RRAM) device at room temperature

By Xie Jihao   Bu Jianpei   Qin Hongwei   Hu Jifan   Ren Shaoqing   Zhu Gengchang  

Journal of Physics: Condensed Matter, Vol. 28, Iss. 5, 2016-02 ,pp. : 56001-56005

IOP Publishing

Access to resources Recommend Favorite