Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor

Publisher: IOP Publishing

E-ISSN: 1741-3540|32|2|20701-20704

ISSN: 0256-307X

Source: Chinese Physics Letters, Vol.32, Iss.2, 2015-02, pp. : 20701-20704

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Abstract