Production of three-dimensional quantum dot lattice of Ge/Si core–shell quantum dots and Si/Ge layers in an alumina glass matrix

By Buljan M   Radić N   Sancho-Paramon J   Janicki V   Grenzer J   Bogdanović-Radović I   Siketić Z   Ivanda M   Utrobičić A   Hübner R   Weidauer R   Valeš V   Endres J   Car T   Jerčinović M   Roško J   Bernstorff S   Holy V  

Nanotechnology, Vol. 26, Iss. 6, 2015-02 ,pp. : 65602-65610

IOP Publishing

Access to resources Recommend Favorite

Band gap modulation of Si-C binary core/shell nanowires by composition and ratio

By Dong Huilong   Guo Zhenyu   Gilmore Keith   Du Chunmiao   Hou Tingjun   Lee Shuit-Tong   Li Youyong  

Nanotechnology, Vol. 26, Iss. 27, 2015-07 ,pp. : 275201-275208

IOP Publishing

Access to resources Recommend Favorite

Selective growth and ordering of SiGe nanowires for band gap engineering

By Benkouider A   Ronda A   Gouyé A   Herrier C   Favre L   Lockwood D J   Rowell N L   Delobbe A   Sudraud P   Berbezier I  

Nanotechnology, Vol. 25, Iss. 33, 2014-08 ,pp. : 335303-335310

IOP Publishing

Access to resources Recommend Favorite

Strong Electro-Absorption in GeSi Epitaxy on Silicon-on-Insulator (SOI)

By Luo Ying   Zheng Xuezhe   Li Guoliang   Shubin Ivan   Thacker Hiren   Yao Jin   Lee Jin-Hyoung   Feng Dazeng   Fong Joan   Kung Cheng-Chih   Liao Shirong   Shafiiha Roshanak   Asghari Mehdi   Raj Kannan   Krishnamoorthy Ashok V.   Cunningham John E.  

Micromachines, Vol. 3, Iss. 2, 2012-04 ,pp. : 345-363

MDPI

Access to resources Recommend Favorite

Zero-bias photocurrents in highly-disordered networks of Ge and Si nanowires

By Rabbani M Golam   Patil Sunil R   Verma Amit   Villarreal Julian E   Korgel Brian A   Nekovei Reza   Khader Mahmoud M   Darling R B   Anantram M P  

Nanotechnology, Vol. 27, Iss. 4, 2016-01 ,pp. : 45201-45209

IOP Publishing

Access to resources Recommend Favorite