High Mobility and Low Density of Trap States in Dual‐Solid‐Gated PbS Nanocrystal Field‐Effect Transistors

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-4095|27|12|2107-2112

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.27, Iss.12, 2015-03, pp. : 2107-2112

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