Electronic properties of MoS2/h‐BN heterostructures: Impact of dopants and impurities

E-ISSN： 1521-3951|251|12|2620-2625

ISSN： 0370-1972

Source： PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol.251, Iss.12, 2014-12, pp. : 2620-2625

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Phase Inversion Membranes from Amphiphilic Diblock Terpolymers

ADVANCED MATERIALS INTERFACES (ELECTRONIC), Vol. 2, Iss. 8, 2015-05 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Electronic Tuning of 2D MoS2 through Surface Functionalization

ADVANCED MATERIALS, Vol. 27, Iss. 40, 2015-10 ,pp. : 6225-6229

John Wiley & Sons Inc

Access to resources Recommend Favorite

Lateral Built‐In Potential of Monolayer MoS2–WS2 In‐Plane Heterostructures by a Shortcut Growth Strategy

ADVANCED MATERIALS, Vol. 27, Iss. 41, 2015-11 ,pp. : 6431-6437

John Wiley & Sons Inc

Access to resources Recommend Favorite

Elastic properties of thin h-BN films investigated by Brillouin light scattering

By Wittkowski T. Jorzick J. Jung K. Hillebrands B.

Thin Solid Films, Vol. 353, Iss. 1, 1999-09 ,pp. : 137-143

Elsevier

Access to resources Recommend Favorite

Water‐Soluble MoS3 Nanoparticles for Photocatalytic H2 Evolution

CHEMSUSCHEM (ELECTRONIC) CHEMISTRY AND SUSTAINABILITY, ENERGY & MATERIALS, Vol. 8, Iss. 8, 2015-04 ,pp. : 1464-1471

John Wiley & Sons Inc

Access to resources Recommend Favorite