Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi‐mono‐crystalline silicon ingots

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-4079|50|1|124-132

ISSN: 0232-1300

Source: CRYSTAL RESEARCH AND TECHNOLOGY (ELECTRONIC), Vol.50, Iss.1, 2015-01, pp. : 124-132

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract