A 3.4 dB NF k‐band LNA with a tapped capacitor matching network in 65 nm CMOS technology

Publisher： John Wiley & Sons Inc

E-ISSN： 1099-047x|25|2|146-153

ISSN： 1096-4290

Source： INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING (ELECTRONIC), Vol.25, Iss.2, 2015-02, pp. : 146-153

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A 7.3 mWW‐band double‐balanced up‐conversion mixer with 7.3 dB conversion gain and 65.5 dB LO‐RF isolation in 90 nm CMOS technology

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 4, 2015-04 ,pp. : 879-886

John Wiley & Sons Inc

Access to resources Recommend Favorite

Low group delay variation 3‐10 GHz 65 nm CMOS stacked power amplifier with 18.1 dBm peak 1 dB compression output power

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 60, Iss. 2, 2018-02 ,pp. : 400-405

John Wiley & Sons Inc

Access to resources Recommend Favorite

A 60 GHz semi‐distributed power combiner in 65 nm CMOS technology

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 60, Iss. 2, 2018-02 ,pp. : 378-385

John Wiley & Sons Inc

Access to resources Recommend Favorite

60‐GHz low‐power OOK transmitter in 65‐NMCMOS technology

By  

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, Vol. 57, Iss. 8, 2015-08 ,pp. : 1977-1980

John Wiley & Sons Inc

Access to resources Recommend Favorite

An ultrawideband SPST switch using defected ground structure low pass filter in 65‐nmCMOS technology

By  

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING (ELECTRONIC), Vol. 25, Iss. 9, 2015-11 ,pp. : 758-768

John Wiley & Sons Inc

Access to resources Recommend Favorite