The effect of tensile and bending strain on the electrical properties of p-type 〈110〉 silicon nanowires

Author: Shao Ruiwen   Gao Pan   Zheng Kun  

Publisher: IOP Publishing

E-ISSN: 1361-6528|26|26|265703-265708

ISSN: 0957-4484

Source: Nanotechnology, Vol.26, Iss.26, 2015-07, pp. : 265703-265708

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Abstract