GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges

By Jie-Jun Wu   Kun Wang   Tong-Jun Yu   Guo-Yi Zhang  

Chinese Physics B, Vol. 24, Iss. 6, 2015-06 ,pp. : 68106-68115

IOP Publishing

Access to resources Recommend Favorite

High-temperature annealing of bulk GaN layers

By Bessolov V.   Zhilyaev Yu.   Kompan M.   Konenkova E.   Kukushkin S.   Mesh M.   Raevskii S.   Fradkov A.   Fedirko V.  

Technical Physics Letters, Vol. 28, Iss. 12, 2002-12 ,pp. : 994-996

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Bulk large-area GaN layers

By Zhilyaev Yu.   Nasonov A.   Raevskii S.   Rodin S.   Shcheglov M.   Yusupova Sh.   Davydov V.  

Technical Physics Letters, Vol. 29, Iss. 5, 2003-05 ,pp. : 400-403

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Photoluminescence of bulk Eu-doped GaN crystals

By Krivolapchuk V.   Mezdrogina M.   Nasonov A.   Rodin S.  

Physics of the Solid State, Vol. 45, Iss. 9, 2003-09 ,pp. : 1634-1637

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Initial stages of the GaN growth on oxidized silicon

By Bessolov V.   Zhilyaev Yu.   Konenkova E.   Kukushkin S.   Luk’yanov A.   Raevskii S.   Fedirko V.  

Technical Physics Letters, Vol. 27, Iss. 12, 2001-12 ,pp. : 1010-1012

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite