The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor

Author: Jie-Yu Qin   Gang Du   Xiao-Yan Liu  

Publisher: IOP Publishing

E-ISSN: 1741-4199|22|10|107104-107108

ISSN: 1674-1056

Source: Chinese Physics B, Vol.22, Iss.10, 2013-10, pp. : 107104-107108

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Abstract