Growth and characterization of quaternary (GaIn)(AsBi) layers for optoelectronic terahertz detector applications

Author： Pačebutas Vaidas Urbanowicz Andrzej Cicėnas Paulius Stanionytė Sandra Bičiūnas Andrius Nevinskas Ignas Krotkus Arūnas

Publisher： IOP Publishing

E-ISSN： 1361-6641|30|9|94012-94017

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.30, Iss.9, 2015-09, pp. : 94012-94017

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