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Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94002-94010

IOP Publishing

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Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with ∆_so > E_g

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Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94015-94021

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Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell

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Does Bi form clusters in GaAs_{1 − x}Bi _x alloys?

By Punkkinen M P J   Laukkanen P   Kuzmin M   Levämäki H   Lång J   Tuominen M   Yasir M   Dahl J   Lu S   Delczeg-Czirjak E K   Vitos L   Kokko K  

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First principles calculations of electronic and optical properties of GaN1−xBix alloys

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