The p-ZnO:N/i-Al2O3/n-GaN heterostructure—electron beam induced profiling, electrical properties and UV detectivity

Author： Przezdziecka E   Chusnutdinow S   Guziewicz E   Snigurenko D   Stachowicz M   Kopalko K   Reszka A   Kozanecki A  

Publisher： IOP Publishing

E-ISSN： 1361-6463|48|32|325105-325110

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.32, 2015-08, pp. : 325105-325110

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