Study of defect management in the growth of semipolar (11-22) GaN on patterned sapphire

Author: Vennéguès P   Tendille F   De Mierry P  

Publisher: IOP Publishing

E-ISSN: 1361-6463|48|32|325103-325109

ISSN: 0022-3727

Source: Journal of Physics D: Applied Physics, Vol.48, Iss.32, 2015-08, pp. : 325103-325109

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract