Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX₂ (X = S, Se, Te) n-MOSFETs

E-ISSN： 1361-6463|48|14|145101-145106

ISSN： 0022-3727

Source： Journal of Physics D: Applied Physics, Vol.48, Iss.14, 2015-04, pp. : 145101-145106

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electronic structures and elastic properties of monolayer and bilayer transition metal dichalcogenides MX2 (M = Mo, W; X = O, S, Se, Te): A comparative first-principles study

By Fan Zeng Wei-Bing Zhang Bi-Yu Tang

Chinese Physics B, Vol. 24, Iss. 9, 2015-09 ,pp. : 97103-97110

IOP Publishing

Access to resources Recommend Favorite

The correlation between aromaticity and stability in planar N2X2 (X = O, S, Se, and Te) Species

By Zhang Yan Xu Yu Li Qian Shu

Molecular Physics, Vol. 105, Iss. 13-14, 2007-07 ,pp. : 1883-1889

Taylor & Francis Ltd

Access to resources Recommend Favorite

Transport mechanisms in MoTe2-x single crystals

Journal de Physique I, Vol. 1, Iss. 5, 1991-05 ,pp. : 779-787

Edp Sciences

Access to resources Recommend Favorite

Investigations of the spin Hamiltonian parameters for the cubic Mn²⁺ centers in ZnX (X = S, Se, Te) and CdTe

By Wang Xue-Feng Wu Shao-Yi Li Li-Li Zhang Shan-Xiang

Canadian Journal of Physics, Vol. 88, Iss. 5, 2010-05 ,pp. : 301-306

NRC Research Press

Access to resources Recommend Favorite

Magneto-transport behaviour of Bi₂Se_3−xTe_x: role of disorder

By Amaladass E P Devidas T R Sharma Shilpam Sundar C S Mani Awadhesh Bharathi A

Journal of Physics: Condensed Matter, Vol. 28, Iss. 7, 2016-02 ,pp. : 75003-75010

IOP Publishing

Access to resources Recommend Favorite