Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth

Author： ZaumseilP   YamamotoY   SchubertM A   CapelliniG   SkibitzkiO   ZoellnerM H   SchroederT  

Publisher： IOP Publishing

E-ISSN： 1361-6528|26|35|355707-355716

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.35, 2015-09, pp. : 355707-355716

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