Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

Author： Shu-XingZhou   MingQi   Li-KunAi   An-HuaiXu   Li-DanWang   PengDing   ZhiJin  

Publisher： IOP Publishing

E-ISSN： 1741-3540|32|9|97101-97104

ISSN： 0256-307X

Source： Chinese Physics Letters, Vol.32, Iss.9, 2015-09, pp. : 97101-97104

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