Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric

E-ISSN： 1521-4095|26|48|8198-8202

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.26, Iss.48, 2014-12, pp. : 8198-8202

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films

ADVANCED MATERIALS, Vol. 27, Iss. 11, 2015-03 ,pp. : 1811-1831

John Wiley & Sons Inc

Access to resources Recommend Favorite

Electrical Properties of Lead‐Free Na1/2Bi1/2TiO3 Relaxor Ferroelectric Ceramics Doped with Hafnium or Zirconium

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Vol. 98, Iss. 6, 2015-06 ,pp. : 1858-1864

John Wiley & Sons Inc

Access to resources Recommend Favorite

Broad excitation of Er luminescence in Er-doped HfO₂ films

By Wang J. Shi Z. Shi Y. Pu L. Pan L. Zhang R. Zheng Y. Tao Z. Lu F.

Applied Physics A, Vol. 94, Iss. 2, 2009-02 ,pp. : 399-403

Springer Publishing Company

Access to resources Recommend Favorite

The n-type Gd-doped HfO₂ to silicon heterojunction diode

By Ketsman I. Losovyj Y.B. Sokolov A. Tang J. Wang Z. Belashchenko K.D. Dowben P.A.

Applied Physics A, Vol. 89, Iss. 2, 2007-11 ,pp. : 489-492

Springer Publishing Company

Access to resources Recommend Favorite

Dielectric Properties of Pure and Gd‐Doped HfO2 Ceramics

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, Vol. 98, Iss. 12, 2015-12 ,pp. : 3918-3924

John Wiley & Sons Inc

Access to resources Recommend Favorite