Normally‐off GaN MIS‐HEMT using a combination of recessed‐gate structure and CF4 plasma treatment

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|5|1170-1173

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1170-1173

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