Improvement of strained InGaN solar cell performance with a heavily doped n+‐GaN substrate

Publisher: John Wiley & Sons Inc

E-ISSN: 1862-6319|212|5|1033-1038

ISSN: 1862-6300

Source: PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.5, 2015-05, pp. : 1033-1038

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Abstract