GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 5, 2015-05 ,pp. : 1195-1200

John Wiley & Sons Inc

Access to resources Recommend Favorite

Al(Ga)N/GaN high electron mobility transistors on silicon

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1049-1058

John Wiley & Sons Inc

Access to resources Recommend Favorite

Aspects of Epitaxial Design and Estimation of 2DEG Mobility in InAlN/AlN/InGaN/GaN High Electron Mobility Transistors

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 215, Iss. 2, 2018-01 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

High temperature dependence of the density of two-dimensional electron gas in Al_0.18Ga_0.82N/GaN heterostructures

By Wang M.J.   Shen B.   Xu F.J.   Wang Y.   Xu J.   Huang S.   Yang Z.J.   Xu K.   Zhang G.Y.  

Applied Physics A, Vol. 88, Iss. 4, 2007-09 ,pp. : 715-718

Springer Publishing Company

Access to resources Recommend Favorite

Barrier Strain and Carbon Incorporation‐Engineered Performance Improvements for AlGaN/GaN High Electron Mobility Transistors**

By  

CHEMICAL VAPOR DEPOSITION (ELECTRONIC), Vol. 21, Iss. 1-2-3, 2015-03 ,pp. : 33-40

John Wiley & Sons Inc

Access to resources Recommend Favorite