Au‐free Si MOS compatible Ni/Ge/Al ohmic contacts to n+‐InGaAs

E-ISSN： 1862-6319|212|4|804-808

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.4, 2015-04, pp. : 804-808

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Study of Ti/Au, Ti/Al/Au, and Ti/Al/Ni/Au ohmic contacts to n-GaN

By Qin Z.X. Chen Z.Z. Tong Y.Z. Ding X.M. Hu X.D. Yu T.J. Zhang G.Y.

Applied Physics A, Vol. 78, Iss. 5, 2004-03 ,pp. : 729-731

Springer Publishing Company

Access to resources Recommend Favorite

Microstructure and Temperature Dependent Electrical Characteristics of Ohmic Contacts to AlGaN/GaN Heterostructures

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 999-1002

Trans Tech Publications

Access to resources Recommend Favorite

Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 391-394

Trans Tech Publications

Access to resources Recommend Favorite

Thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts to n-type GaAs

By McNally P.J. Islam M.S.

Thin Solid Films, Vol. 320, Iss. 2, 1998-05 ,pp. : 253-259

Elsevier

Access to resources Recommend Favorite

4H-SiC nMOSFETs with As-Doped S/D and NbNi Silicide Ohmic Contacts

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 573-576

Trans Tech Publications

Access to resources Recommend Favorite