Surface orientation as a control parameter for the growth of non‐stoichiometric gallium arsenide

E-ISSN： 1862-6319|202|15|2980-2991

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.202, Iss.15, 2005-12, pp. : 2980-2991

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Epitaxial growth of electrodeposited cadmium selenide on (111) gallium arsenide

By Cachet H. Cortes R. Froment M. Maurin G.

Philosophical Magazine Letters, Vol. 79, Iss. 10, 1999-10 ,pp. : 837-840

Taylor & Francis Ltd

Access to resources Recommend Favorite

Single crystal growth of non-stoichiometric -FeSi 2 by chemical transport reaction

By Behr G. Ivanenko L. Vinzelberg H. Heinrich A.

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 276-281

Elsevier

Access to resources Recommend Favorite

A theory of tracer diffusion in non-stoichiometric intermetallic compounds

By Belova I. V. Murch G. E.

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 82, Iss. 2, 2002-01 ,pp. : 269-283

Taylor & Francis Ltd

Access to resources Recommend Favorite

Non-stoichiometric niobium nitrides: structure and properties

By Torche M. Schmerber G. Guemmaz M. Mosser A. Parlebas J.C.

Thin Solid Films, Vol. 436, Iss. 2, 2003-07 ,pp. : 208-212

Elsevier

Access to resources Recommend Favorite

Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density

By Remashan K. Bhat K.N.

Thin Solid Films, Vol. 342, Iss. 1, 1999-03 ,pp. : 20-29

Elsevier

Access to resources Recommend Favorite