Growth of β‐gallium oxide films and nanostructures by atmospheric‐ pressure CVD using gallium and water as source materials

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|12|7|985-988

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.7, 2015-07, pp. : 985-988

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Growth kinetics of hydrogenated amorphous silicon carbide films by RF plasma-enhanced CVD using two kinds of source materials

By Kaneko T. Miyakawa N. Sone H. Yamazaki H.

Thin Solid Films, Vol. 409, Iss. 1, 2002-04 ,pp. : 74-77

Elsevier

Access to resources Recommend Favorite

An investigation into the early stages of oxide growth on gallium nitride

By Wolter S.D. DeLucca J.M. Mohney S.E. Kern R.S. Kuo C.P.

Thin Solid Films, Vol. 371, Iss. 1, 2000-08 ,pp. : 153-160

Elsevier

Access to resources Recommend Favorite

Manganese-activated gallium oxide electroluminescent phosphor thin films prepared using various deposition methods

By Miyata T. Nakatani T. Minami T.

Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 145-149

Elsevier

Access to resources Recommend Favorite

Chemical vapour deposition and characterization of gallium oxide thin films

By Battiston G.A. Gerbasi R. Porchia M. Bertoncello R. Caccavale F.

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 115-118

Elsevier

Access to resources Recommend Favorite

Temperature dependence of the growth of gallium oxide on CoGa(100)

By Pan F.M. Verheij L.K. David R. Franchy R.

Thin Solid Films, Vol. 400, Iss. 1, 2001-12 ,pp. : 22-25

Elsevier

Access to resources Recommend Favorite