Minority carrier diffusion length in AlxGa1‐xN (x = 0.1) grown by ammonia molecular beam epitaxy

Publisher： John Wiley & Sons Inc

E-ISSN： 1610-1642|12|4‐5|447-450

ISSN： 1862-6351

Source： PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.12, Iss.4‐5, 2015-04, pp. : 447-450

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electronic and structural properties of zincblende AlxGa1-xN

By Liou B.-T.  

Applied Physics A, Vol. 86, Iss. 4, 2007-03 ,pp. : 539-543

Springer Publishing Company

Access to resources Recommend Favorite

Growth and characterization of AlxGa1−xN lateral polarity structures

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 1039-1042

John Wiley & Sons Inc

Access to resources Recommend Favorite

The effect of metal‐rich growth conditions on the microstructure of ScxGa1−xN films grown using molecular beam epitaxy

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 12, 2015-12 ,pp. : 2837-2842

John Wiley & Sons Inc

Access to resources Recommend Favorite

Optical properties of GaAs 1− x N x alloys grown by molecular beam epitaxy

By Alam J.  

Philosophical Magazine, Vol. 86, Iss. 23, 2006-08 ,pp. : 3477-3486

Taylor & Francis Ltd

Access to resources Recommend Favorite

Defects and localized states in MBE-grown GaAs 1- x N x solid solutions prepared by molecular-beam epitaxy

By Polyakov A. Y.   Smirnov N. B.   Govorkov A. V.   Bublik V. T.   Botchkarev A. E.   Griffin James A.   Johnstone Daniel K.   Steiner Todd   Noor Mohammad S.  

Philosophical Magazine, Vol. 83, Iss. 21, 2003-07 ,pp. : 2531-2544

Taylor & Francis Ltd

Access to resources Recommend Favorite