Desorption induced GaN quantum dots on (0001) AlN by MOVPE

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 9, 2015-09 ,pp. : 526-529

John Wiley & Sons Inc

Access to resources Recommend Favorite

Intraband spectroscopy of self-organized GaN/AlN quantum dots

By Helman A.   Fossard F.   Tchernycheva M.   Moumanis K.   Lusson A.   Julien F.   Damilano B.   Grandjean N.   Massies J.   Adelman C.   Daudin B.   Le Si Dang D.  

Physica E, Vol. 17, Iss. unknown, 2003-04 ,pp. : 60-63

Elsevier

Access to resources Recommend Favorite

Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface

By Huang J.S.   Chen Z.   Luo X.D.   Xu Z.Y.   Ge W.K.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 13-17

Elsevier

Access to resources Recommend Favorite

Nitrogen vacancy and oxygen impurity in AlN: spintronic quantum dots

By Vail J. M.   Haroon T.   Hernandez-Melgar J.   Chevrier D. K.   Pandey R.  

Radiation Effects and Defects in Solids, Vol. 164, Iss. 10, 2009-10 ,pp. : 585-591

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation of cubic GaN quantum dots grown by the Stranski‐Krastanov process

By  

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 4‐5, 2015-04 ,pp. : 452-455

John Wiley & Sons Inc

Access to resources Recommend Favorite