Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

Publisher： John Wiley & Sons Inc

E-ISSN： 1521-4095|27|16|2614-2620

ISSN： 0935-9648

Source： ADVANCED MATERIALS, Vol.27, Iss.16, 2015-04, pp. : 2614-2620

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