Low‐Dimensional Structure Vacuum‐Ultraviolet‐Sensitive (λ < 200 nm) Photodetector with Fast‐Response Speed Based on High‐Quality AlN Micro/Nanowire

Publisher: John Wiley & Sons Inc

E-ISSN: 1521-4095|27|26|3921-3927

ISSN: 0935-9648

Source: ADVANCED MATERIALS, Vol.27, Iss.26, 2015-07, pp. : 3921-3927

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

A low‐dimensional‐structure vacuum‐ultraviolet‐sensitive photodetector based on high‐quality aluminum nitride (AlN) micro‐/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum‐ultraviolet (VUV) photon detection and opens a way for developing diminutive, power‐saving, and low‐cost VUV materials and sensors that can be potentially applied in geospace sciences and solar‐terrestrial physics.