Publisher: John Wiley & Sons Inc
E-ISSN: 1521-4095|27|26|3921-3927
ISSN: 0935-9648
Source: ADVANCED MATERIALS, Vol.27, Iss.26, 2015-07, pp. : 3921-3927
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
A low‐dimensional‐structure vacuum‐ultraviolet‐sensitive photodetector based on high‐quality aluminum nitride (AlN) micro‐/nanowires is reported. This work, for the first time, demonstrates that a semiconductor nanostructure can be applied in vacuum‐ultraviolet (VUV) photon detection and opens a way for developing diminutive, power‐saving, and low‐cost VUV materials and sensors that can be potentially applied in geospace sciences and solar‐terrestrial physics.
Related content
ADVANCED MATERIALS, Vol. 27, Iss. 26, 2015-07 ,pp. :
High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Philosophical Magazine Letters, Vol. 81, Iss. 6, 2001-06 ,pp. :
Picture of the low-dimensional structure in chaotic dripping faucets
By Kiyono K. Katsuyama T. Masunaga T. Fuchikami N.
Physics Letters A, Vol. 320, Iss. 1, 2003-12 ,pp. :