Silicon-based Microphotonics: from Basics to Applications ( International School of Physics “Enrico Fermi” )

Publication series :International School of Physics “Enrico Fermi”

Author: Bisi   O.;Campisano   S.U.; Pavesi   L.;  

Publisher: Ios Press‎

Publication year: 1999

E-ISBN: 9781614992264

P-ISBN(Hardback):  9789051995022

Subject: O4 Physics

Keyword: null 物理学Physics

Language: ENG

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Description

The evolution of Si-based optoelectronics has been extremely fast in the last few years and it is predicted that this growth will still continue in the near future. The aim of the volume is to present different Si-based luminescing materials as porous silicon, rare-earth doped silicon, Si nanocrystals, silicides, Si-based multilayers and silicon-germanium alloy or superlattice structures. The different devices needed for an all-Si-based optoelectronics are treated, ranging from light sources to waveguides, from amplifiers and modulators to detectors. Both the very basic treatments as well as applications to real prototype devices and integration in an optical integrated circuit are presented. Several issues are highlighted: the problem of electrical transport in low-dimensional Si systems, the possibility of gain in Si-based systems, the low modulation speed of Si-based LEDs. The book gives a fascinating picture of the state-of-the-art in Si microphotonics and a perspective on what one can expect in the near future.

Chapter

Porous silicon

Porous silicon

Silicon nanoparticles and clusters

Silicon nanoparticles and clusters

Energy transfer for electroluminescence in nanostructured films

Energy transfer for electroluminescence in nanostructured films

Silicon-insulator multi quantum well and superlattice structures

Silicon-insulator multi quantum well and superlattice structures

Silicon germanium technology

Silicon germanium technology

Silicon nanostructures

Silicon nanostructures

Introduction

Introduction

Physics of Si nanostructures-an intuitive approach

Physics of Si nanostructures-an intuitive approach

Recombination in bulk silicon

Recombination in bulk silicon

Quantum confinement

Quantum confinement

Bandgap and recombination rates

Bandgap and recombination rates

Si nanocrystals

Si nanocrystals

Fabrication techniques

Fabrication techniques

Ion implantation into SiO2

Ion implantation into SiO2

Formation

Formation

PL characteristics

PL characteristics

Stretched exponential decay

Stretched exponential decay

Passivation and oxidation

Passivation and oxidation

High injection pumping and optical gain

High injection pumping and optical gain

Electroluminescent devices

Electroluminescent devices

Other Si nanostructures

Other Si nanostructures

Pillars, wires and walls

Pillars, wires and walls

Quantum wells

Quantum wells

Self-limiting oxidation

Self-limiting oxidation

Direct-bandgap nanocrystals and single-dot measurements

Direct-bandgap nanocrystals and single-dot measurements

Si-nanostructure-based devices

Si-nanostructure-based devices

Coulomb blockade

Coulomb blockade

Single-electron device

Single-electron device

Conclusions and future outlook

Conclusions and future outlook

Si nanostructures for optical applications

Si nanostructures for optical applications

Si-nanoelectronics

Si-nanoelectronics

Porous silicon

Porous silicon

Introduction

Introduction

Porous silicon fabrication

Porous silicon fabrication

How porous silicon is made

How porous silicon is made

Current-voltage characteristics

Current-voltage characteristics

Dissolution chemistries

Dissolution chemistries

Pore formation

Pore formation

Effect of anodization conditions

Effect of anodization conditions

Drying

Drying

Structure

Structure

Pore size and shape

Pore size and shape

Transmission electron microscopy

Transmission electron microscopy

BET technique

BET technique

Crystallinity in porous silicon

Crystallinity in porous silicon

EXAFS measurements

EXAFS measurements

Raman measurements

Raman measurements

Mechanical and thermal properties

Mechanical and thermal properties

Strain in porous silicon

Strain in porous silicon

Elastic properties

Elastic properties

Thermal properties

Thermal properties

Microhardness

Microhardness

Chemical properties

Chemical properties

Chemical composition of as-prepared PS

Chemical composition of as-prepared PS

Degradation under analysis

Degradation under analysis

Aging

Aging

Intentional oxidization

Intentional oxidization

Surface modification

Surface modification

Electrical properties

Electrical properties

Resistivity

Resistivity

Low-porosity samples

Low-porosity samples

High-porosity nanometric samples

High-porosity nanometric samples

Effect of environment conditions

Effect of environment conditions

Models for electrical transport in nanosize PS

Models for electrical transport in nanosize PS

Porous Si diodes

Porous Si diodes

Optical properties

Optical properties

PS band-gap

PS band-gap

Refractive index

Refractive index

Dielectric multilayers

Dielectric multilayers

Absorption

Absorption

Luminescence

Luminescence

PS luminescence bands

PS luminescence bands

IR band

IR band

F-band

F-band

S-band

S-band

Aging, oxidization and fatigue effects

Aging, oxidization and fatigue effects

Time-resolved photoluminescence

Time-resolved photoluminescence

Vibronic structure and polarization memory

Vibronic structure and polarization memory

Models for PS luminescence

Models for PS luminescence

The hydrogenated amorphous silicon model

The hydrogenated amorphous silicon model

The surface hydrides model

The surface hydrides model

Defect models

Defect models

Siloxene model

Siloxene model

Surface states models

Surface states models

Quantum confinement model

Quantum confinement model

PS microcavities

PS microcavities

Conclusion

Conclusion

Porous silicon: Fundamental properties, carrier transport, light-emitting devices, and optoelectronic applications

Porous silicon: Fundamental properties, carrier transport, light-emitting devices, and optoelectronic applications

A brief overview of porous silicon

A brief overview of porous silicon

Introduction to porous silicon

Introduction to porous silicon

Preparation of porous silicon

Preparation of porous silicon

Stabilization of porous silicon

Stabilization of porous silicon

Intrinsic optical properties of porous silicon

Intrinsic optical properties of porous silicon

Extrinsic optical properties of porous silicon

Extrinsic optical properties of porous silicon

Other nanoscale silicon structures

Other nanoscale silicon structures

Carrier transport

Carrier transport

Introduction

Introduction

Electrical properties

Electrical properties

The time-of-flight technique and the carrier mobility

The time-of-flight technique and the carrier mobility

Introduction

Introduction

The time-of-flight technique

The time-of-flight technique

Drift mobility in PSi

Drift mobility in PSi

Interpretation

Interpretation

Electroluminescence

Electroluminescence

A brief historical perspective

A brief historical perspective

State-of-the-art LEDs

State-of-the-art LEDs

LED lifetime

LED lifetime

LED efficiency

LED efficiency

LED response time

LED response time

LED emission wavelength

LED emission wavelength

Integration with microelectronics

Integration with microelectronics

Compatibility with microelectronics

Compatibility with microelectronics

LED integration with microelectronic circuits

LED integration with microelectronic circuits

Other applications

Other applications

Solar cells

Solar cells

Mirrors and photonic bandgap

Mirrors and photonic bandgap

Waveguides

Waveguides

Electron states in confined silicon systems

Electron states in confined silicon systems

Introduction

Introduction

Electronic properties

Electronic properties

Linear methods

Linear methods

LMTO-ASA method for the investigation of surfaces, interfaces and confined systems

LMTO-ASA method for the investigation of surfaces, interfaces and confined systems

SLMTO-ASA calculation of the optical properties

SLMTO-ASA calculation of the optical properties

Si quantum wells: electronic and optical properties

Si quantum wells: electronic and optical properties

H-Si(111)-H systems

H-Si(111)-H systems

Si(111)-CaF2(111) multiple quantum wells

Si(111)-CaF2(111) multiple quantum wells

Si quantum wires: electronic and optical properties

Si quantum wires: electronic and optical properties

Energy bands and band gaps

Energy bands and band gaps

Quantum confinement vs. role of H and O-H passivation

Quantum confinement vs. role of H and O-H passivation

Optical properties of totally and partially passivated Si quantum wires

Optical properties of totally and partially passivated Si quantum wires

Auger lineshape spectroscopy and radiative lifetimes

Auger lineshape spectroscopy and radiative lifetimes

Wire-wire interaction

Wire-wire interaction

Quantum dots: electronic and optical properties

Quantum dots: electronic and optical properties

Conclusions

Conclusions

Plasmons in quantum wires

Plasmons in quantum wires

Introduction

Introduction

The dielectric tensor

The dielectric tensor

The long-wavelength limit

The long-wavelength limit

Isotropic medium

Isotropic medium

Ideal quantum wires

Ideal quantum wires

Interconnected quantum wires

Interconnected quantum wires

The unretarded limit

The unretarded limit

The Laplace equation for the single wire

The Laplace equation for the single wire

The self-consistent dielectric response

The self-consistent dielectric response

The evaluation of the loss function

The evaluation of the loss function

Discussion and conclusion

Discussion and conclusion

Light emission of Er^(3+) in crystalline silicon

Light emission of Er^(3+) in crystalline silicon

Introduction

Introduction

The incorporation of Er in Si

The incorporation of Er in Si

Electrical properties of Er in Si

Electrical properties of Er in Si

Photoluminescence and excitation mechanisms

Photoluminescence and excitation mechanisms

Auger processes

Auger processes

De-excitation processes and luminescence intensity

De-excitation processes and luminescence intensity

Quantum efficiency

Quantum efficiency

Erbium-doped Si nanocrystals

Erbium-doped Si nanocrystals

Electroluminescence

Electroluminescence

Compound semiconductors on silicon

Compound semiconductors on silicon

Introduction

Introduction

Monolithic integration

Monolithic integration

Si vs. GaAs

Si vs. GaAs

Blanket epitaxy of GaAs on Si

Blanket epitaxy of GaAs on Si

Selective GaAs on Si

Selective GaAs on Si

Lift-off of epitaxial III-V films

Lift-off of epitaxial III-V films

Mesa release and deposition

Mesa release and deposition

Wafer bonding

Wafer bonding

Conformal growth

Conformal growth

Device applications

Device applications

MESFETs

MESFETs

MODFETs

MODFETs

Co-integration of GaAs and Si FETs

Co-integration of GaAs and Si FETs

Resonant tunnelling diodes

Resonant tunnelling diodes

Solar cells

Solar cells

Heterojunction bipolar transistors (HBT)

Heterojunction bipolar transistors (HBT)

Photodetectors and modulators

Photodetectors and modulators

Light-emitting diodes

Light-emitting diodes

Lasers

Lasers

Conclusions

Conclusions

Integrated optics in III-V compounds

Integrated optics in III-V compounds

Introduction

Introduction

Fundamental considerations

Fundamental considerations

Optical system

Optical system

Materials

Materials

General properties of III-V materials

General properties of III-V materials

Fabrication of III-V materials

Fabrication of III-V materials

Liquid phase epitaxy (LPE)

Liquid phase epitaxy (LPE)

Chemical vapor deposition (CVD)

Chemical vapor deposition (CVD)

Metal organic chemical vapor deposition (MOCVD)

Metal organic chemical vapor deposition (MOCVD)

Molecular beam epitaxy (MBE)

Molecular beam epitaxy (MBE)

Gas source MBE (GSMBE)

Gas source MBE (GSMBE)

Chemical beam epitaxy (CBE)

Chemical beam epitaxy (CBE)

Optical absorption and emission

Optical absorption and emission

Bulk materials

Bulk materials

Quantum wells and superlattices

Quantum wells and superlattices

Junctions

Junctions

p-n and p-i-n junctions

p-n and p-i-n junctions

Heterojunctions

Heterojunctions

Schottky barriers

Schottky barriers

Metal-oxide-semiconductor (MOS) junctions

Metal-oxide-semiconductor (MOS) junctions

Optical waveguides

Optical waveguides

Free carrier effects

Free carrier effects

Diffusion and/or implantation

Diffusion and/or implantation

Metal gap waveguides

Metal gap waveguides

Rib or ridge waveguides

Rib or ridge waveguides

Embedded waveguides

Embedded waveguides

Gain and electro-optic effects in III-V materials

Gain and electro-optic effects in III-V materials

General remarks

General remarks

Gain effects

Gain effects

Electro-optic effects

Electro-optic effects

Applications of the concepts and outlook

Applications of the concepts and outlook

Conclusion

Conclusion

The physics of modulators

The physics of modulators

Introduction

Introduction

Basics of the electro-optic effect

Basics of the electro-optic effect

Light propagation in anisotropic materials: birefringence and the index ellipsoid

Light propagation in anisotropic materials: birefringence and the index ellipsoid

Voltage controlled changes in the optical pathlength: phase modulators

Voltage controlled changes in the optical pathlength: phase modulators

Optical waveguides: better light confinement and improved device efficiency

Optical waveguides: better light confinement and improved device efficiency

Electro-optic heterostructure modulators on silicon

Electro-optic heterostructure modulators on silicon

Semiconductor electroabsorption

Semiconductor electroabsorption

Thermo-optic effects

Thermo-optic effects

Free-carrier plasma dispersion

Free-carrier plasma dispersion

Summary and perspectives

Summary and perspectives

Silicon and silicon-based photodetectors

Silicon and silicon-based photodetectors

Introduction

Introduction

Photoconductive detectors

Photoconductive detectors

Photodiodes

Photodiodes

The responsivity

The responsivity

Noise equivalent power

Noise equivalent power

Detectivity

Detectivity

Response time of pn- and pin-photodetectors

Response time of pn- and pin-photodetectors

Avalanche photodetectors

Avalanche photodetectors

Phototransistors

Phototransistors

Metal-semiconductor detectors

Metal-semiconductor detectors

Si-Ge-heterostructure photodetectors

Si-Ge-heterostructure photodetectors

Color-sensitive photodiodes based on amorphous silicon and its alloys

Color-sensitive photodiodes based on amorphous silicon and its alloys

Charge coupled devices (CCD)

Charge coupled devices (CCD)

Concluding remarks

Concluding remarks

Silicon-based optoelectronics

Silicon-based optoelectronics

Introduction

Introduction

Why silicon?

Why silicon?

Integration

Integration

CMOS compatibility

CMOS compatibility

Efficiency

Efficiency

Material systems

Material systems

MEL-ARI on optoelectronic interconnects

MEL-ARI on optoelectronic interconnects

Scope

Scope

Optoelectronic interconnects for integrated circuits

Optoelectronic interconnects for integrated circuits

Technical domains

Technical domains

Specific project characteristics

Specific project characteristics

MEL-ARI OPTO projects launched in September 1996

MEL-ARI OPTO projects launched in September 1996

RODCI-Reconfigurable optical devices for chip interconnects

RODCI-Reconfigurable optical devices for chip interconnects

MONOLITH-Monolithic integration of light-emitting devices with Si-ICs using conformal epitaxy

MONOLITH-Monolithic integration of light-emitting devices with Si-ICs using conformal epitaxy

OIIC-Generic approach to manufacturable optoelectronic interconnects for VLSI circuits

OIIC-Generic approach to manufacturable optoelectronic interconnects for VLSI circuits

SIBLE-Si-based light emission

SIBLE-Si-based light emission

SPOEC-Smart-pixel optoelectronic connections

SPOEC-Smart-pixel optoelectronic connections

MEL-ARI OPTO projects launched in September 1998

MEL-ARI OPTO projects launched in September 1998

SILITE-Silicon-based light emitters

SILITE-Silicon-based light emitters

SMILE-Silicon modules for integrated light engineering

SMILE-Silicon modules for integrated light engineering

SIBOIA-Silicon-based optical interconnect architecture

SIBOIA-Silicon-based optical interconnect architecture

OLSI-Optical links in silicon

OLSI-Optical links in silicon

BONTEC-Bonding technology

BONTEC-Bonding technology

SHOTS-Self-assembled hybrid optoelectronic technologies

SHOTS-Self-assembled hybrid optoelectronic technologies

Roadmap

Roadmap

Conclusions

Conclusions

Elenco dei partecipanti

Elenco dei partecipanti

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