Large-signal characterizations of DDR IMPATT devices based on group III–V semiconductors at millimeter-wave and terahertz frequencies

Author： Acharyya Aritra   Mallik Aliva   Banerjee Debopriya   Ganguli Suman   Das Arindam   Dasgupta Sudeepto   Banerjee J. P.  

Publisher： IOP Publishing

ISSN： 1674-4926

Source： Journal of Semiconductors, Vol.35, Iss.8, 2014-08, pp. : 84003-84012

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