Electronic and Structural Properties of Ga-Doped (4,4) armchair SiCNT as a p-Semiconductor

Author: Baei Mohammad T.   Hashemian Saeedeh   Torabi Parviz   Gharehbaghi Akram  

Publisher: Taylor & Francis Ltd

ISSN: 1536-383X

Source: Fullerenes, Nanotubes and Carbon Nanostructures, Vol.23, Iss.1, 2015-01, pp. : 54-61

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