Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

Author： Nasyrov K. Shameev S. Gritsenko V. Han J. Kim C. Lee J.

ISSN： 1063-7761

Source： Journal of Experimental and Theoretical Physics, Vol.102, Iss.5, 2006-11, pp. : 810-820

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Silicon MOS structures with nonstoichiometric metal-oxide semiconductors

By Tutov E. Ryabtsev S. Tutov E. Bormontov E.

Technical Physics, Vol. 51, Iss. 12, 2006-12 ,pp. : 1604-1607

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Electrical properties of metal-dysprosium oxide-gadolinium oxide-silicon structures

By Rozhkov V. Rodionov M.

Technical Physics Letters, Vol. 30, Iss. 6, 2004-06 ,pp. : 494-496

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Composition profiles of silicon-silicon oxide and silicon-rare earth oxide structures

By Latukhina N. Lebedev V.

Technical Physics Letters, Vol. 31, Iss. 7, 2005-07 ,pp. : 564-566

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Status of Surface Electron/Hole Layer on Oxide Ferroelectrics

By Watanabe Yukio Urakami Yosuke Kaku Sigeru Matsumoto Daisuke

Ferroelectrics, Vol. 355, Iss. 1, 2007-01 ,pp. : 13-18

Taylor & Francis Ltd

Access to resources Recommend Favorite

Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation

Le Journal de Physique IV, Vol. 06, Iss. C3, 1996-04 ,pp. : C3-19-C3-24

Edp Sciences

Access to resources Recommend Favorite