Method of envelope functions and intervalley Γ-X _z interaction of states in (001) III–V semiconductor heterostructures

ISSN： 1063-7761

Source： Journal of Experimental and Theoretical Physics, Vol.90, Iss.6, 2000-06, pp. : 1063-1070

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

CHEMICAL BEAM EPITAXY OF III-V SEMICONDUCTOR HETEROSTRUCTURES

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-13-C5-19

Edp Sciences

Access to resources Recommend Favorite

Appearance of resonant Γ-X mixing in gradient GaAs/AlAs short-period superlattices

By Gerlovin I. Dolgikh Yu. Efimov Yu. Ignat’ev I. Nedokus I.

Physics of the Solid State, Vol. 40, Iss. 5, 1998-05 ,pp. : 756-757

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Intervalley electron scattering by phonons in (GaAs)_m(AlAs)_n(001) ultrathin superlattices

By Grinyaev S. Nikitina L. Tyuterev V.

Physics of the Solid State, Vol. 52, Iss. 8, 2010-08 ,pp. : 1606-1614

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Optimization of the plastic relaxation of misfit stresses in Ge_xSi_1−x/Si(001) (x≤0.61) heterostructures

By Bolkhovityanov Yu. Deryabin A. Gutakovskii A. Revenko M. Sokolov L.

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 68-70

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Solar cell technology on the base of III–V heterostructures

Journal of Physics: Conference Series , Vol. 253, Iss. 1, 2010-11 ,pp. : 327-332

IOP Publishing

Access to resources Recommend Favorite