Related content

Photoluminescence of germanium quantum dots grown in silicon on a SiO₂ submonolayer

By Shamirzaev T.   Seksenbaev M.   Zhuravlev K.   Nikiforov A.   Ul’yanov V.   Pchelyakov O.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 82-85

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structure and transport properties of Ge quantum dots in a SiO₂ matrix

By Slunjski R   Dubček P   Radić N   Bernstorff S   Pivac B  

Journal of Physics D: Applied Physics, Vol. 48, Iss. 23, 2015-06 ,pp. : 235301-235306

IOP Publishing

Access to resources Recommend Favorite

Preparation and Photoluminescence Properties of Eu²⁺-Doped Oxyapatite-Type Sr_xLa_10−x (SiO₄)₆O_3−x/2

By Zhao-Feng Cui   Shuang-Long Yuan   Yun-Xia Yang   Chevire François   Tessier Franck   Guo-Rong Chen  

Chinese Physics Letters, Vol. 28, Iss. 1, 2011-01 ,pp. : 14209-14212

IOP Publishing

Access to resources Recommend Favorite

Efficiency of Si L _2,3 x-ray generation in the SiO₂/Si system by electron impact

By Shulakov A.   Braiko A.   Moroz N.   Fomichev V.  

Physics of the Solid State, Vol. 40, Iss. 10, 1998-10 ,pp. : 1754-1757

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Micro-Raman scattering by laser-modified structures with Ge/Si quantum dots

By Milekhin A.   Varavin V.   Nikiforov A.   Pchelyakov O.   Maev D.   Vogel N.   Zahn D.  

Physics of the Solid State, Vol. 48, Iss. 11, 2006-11 ,pp. : 2183-2186

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite