Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system

Author： Vasil’ev D.   Evtikhiev V.   Tokranov V.   Kudryashov I.   Kochereshko V.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7834

Source： Physics of the Solid State, Vol.40, Iss.5, 1998-05, pp. : 787-789

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Long-Wavelength InAs/GaAs Quantum-Dot Light Emitting Sources Monolithically Grown on Si Substrate

By Chen Siming   Tang Mingchu   Wu Jiang   Jiang Qi   Dorogan Vitaliy   Benamara Mourad   Mazur Yuriy I.   Salamo Gregory J.   Liu Huiyun  

Photonics, Vol. 2, Iss. 2, 2015-06 ,pp. : 646-658

MDPI

Access to resources Recommend Favorite

The effect of exposure to arsenic flow on the optical properties of quantum dot arrays in the InAs/GaAs(100) system

By Dubrovskii V.   Kryzhanovskaya N.   Ustinov V.   Tonkikh A.   Egorov V.   Polyakov N.   Samsonenko Yu.   Cirlin G.  

Technical Physics Letters, Vol. 30, Iss. 4, 2004-04 ,pp. : 272-274

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Quantum Hall effect-insulator transition in the InAs/GaAs system with quantum dots

By Kul’bachinskii V.   Lunin R.   Rogozin V.   Golikov A.   Kytin V.   Zvonkov B.   Nekorkin S.   Filatov D.   Visser A.  

Physics of the Solid State, Vol. 45, Iss. 4, 2003-04 ,pp. : 762-767

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Study of annealed InAs/GaAs quantum dot structures

By  

Journal of Physics: Conference Series , Vol. 209, Iss. 1, 2010-02 ,pp. : 206-211

IOP Publishing

Access to resources Recommend Favorite

Electro- and photoluminescence of InAs/GaAs quantum dot structures

By  

Journal of Physics: Conference Series , Vol. 245, Iss. 1, 2010-09 ,pp. : 323-326

IOP Publishing

Access to resources Recommend Favorite