Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

Author: Poklonskii N.   Vyrko S.   Zabrodskii A.   Egorov S.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7834

Source: Physics of the Solid State, Vol.45, Iss.11, 2003-11, pp. : 2053-2059

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